tpsma6.8 thru tpsma43a vishay semiconductors formerly general semiconductor document number 88405 www.vishay.com 06-may-02 1 surface mount automotive transient voltage suppressors breakdown voltage 6.8 to 43.0v peak pulse power 400w maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol value unit peak power dissipation with a 10/1000 s waveform (1)(2) (fig. 3) p ppm minimum 400 w peak power pulse current with a 10/1000 s waveform (1) (fig. 1) i ppm see next table a peak forward surge current 8.3ms single half sine-wave (3) i fsm 40 a maximum instantaneous forward voltage at 25a (3) v f 3.5 v operating junction and storage temperature range t j , t stg 65 to +185 ? notes: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25? per fig. 2 (2) mounted on p.c.b. with 0.2 x 0.2 (5.0 x 0.5mm) copper pads attached to each terminal (3) measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum 0.157 (3.99) 0.177 (4.50) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) max. 0.194 (4.93) 0.208 (5.28) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.049 (1.25) 0.065 (1.65) cathode band available in uni-directional only do-214ac (sma) dimensions in inches and (millimeters) patented* mechanical data case: jedec do-214ac molded plastic body over passivated chip terminals: solder plated, solderable per mil-std-750, method 2026 polarity: the color band denotes the cathode, which is positive with respect to the anode under normal tvs operation mounting position: any weight: 0.002 oz., 0.064 g packaging codes/options: 5a/7.5k per 13" reel (12mm tape), 90k/box 11/1.8k per 7" reel (12mm tape), 36k/box 0.060 min (1.52 min) 0.050 min (1.27 min) 0.220 ref (5.58) 0.094 max (2.38 max) mounting pad layout *patent # s 4,980,315 5,166,769 5,278,094 features plastic package has underwriters laboratory flammability classification 94v-0 ideal for automated placement low profile package built-in strain relief exclusive patented par oxide passivated chip construction 400w peak pulse power capability with a 10/1000ms waveform, repetition rate (duty cycle): 0.01% excellent clamping capability low incremental surge resistance very fast response time for devices with v (br) 10v i d are typically less than 1.0ma at t a = 150 c designed for under the hood surface mount applications high temperature soldering: 250 c/10 seconds at terminals
tpsma6.8 thru tpsma43a vishay semiconductors formerly general semiconductor www.vishay.com document number 88405 2 06-may-02 electrical characteristics (t a = 25 c unless otherwise noted) t j = 150? maximum breakdown voltage maximum maximum peak pulse maximum v (br) (1) at i t reverse reverse surge clamping device (v) test stand-off leakage leakage current voltage marking current voltage at v wm at v wm i ppm (note 2) at i ppm device code min. max. i t (ma) v wm (volts) i r ( a) i d ( a) (amps) vc (volts) tpsma6.8 adp 6.12 7.48 10 5.50 300 1000 37.0 10.8 tpsma6.8a aep 6.45 7.14 10 5.80 300 1000 38.1 10.5 tpsma7.5 afp 6.75 8.25 10 6.05 150 500 34.2 11.7 tpsma7.5a agp 7.13 7.88 10 6.40 150 500 35.4 11.3 tpsma8.2 ahp 7.38 9.02 10 6.63 50 200 32.0 12.5 tpsma8.2a akp 7.79 8.61 10 7.02 50 200 33.1 12.1 tpsma9.1 alp 8.19 10.00 1.0 7.37 10 50 29.0 13.8 tpsma9.1a amp 8.65 9.55 1.0 7.78 10 50 29.9 13. tpsma10 anp 9.00 11.00 1.0 8.10 5.0 20 26.7 15.0 tpsma10a app 9.50 10.50 1.0 8.65 5.0 20 27.6 14.5 tpsma11 aqp 9.90 12.10 1.0 8.92 1.0 5.0 24.7 16.2 tpsma11a arp 10.50 11.60 1.0 9.40 1.0 5.0 25.6 15.6 tpsma12 asp 10.80 13.20 1.0 9.72 1.0 5.0 23.1 17.3 tpsma12a atp 11.40 12.60 1.0 10.20 1.0 5.0 24.0 16.7 tpsma13 aup 11.70 14.30 1.0 10.50 1.0 5.0 21.1 19.0 tpsma13a avp 12.40 13.70 1.0 11.10 1.0 5.0 22.0 18.2 tpsma15 awp 13.50 16.30 1.0 12.10 1.0 5.0 18.2 22.0 tpsma15a axp 14.30 15.80 1.0 12.80 1.0 5.0 18.9 21.2 tpsma16 ayp 14.40 17.60 1.0 12.90 1.0 5.0 17.0 23.5 tpsma16a azp 15.20 16.80 1.0 13.60 1.0 5.0 17.8 22 tpsma18 bdp 16.20 19.80 1.0 14.50 1.0 5.0 15.1 26.5 tpsma18a bep 17.10 18.90 1.0 15.30 1.0 5.0 15.9 25.5 tpsma20 bfp 18.00 22.00 1.0 16.20 1.0 5.0 13.7 29.1 tpsma20a bgp 19.00 21.00 1.0 17.10 1.0 5.0 14.4 27.7 tpsma22 bhp 19.80 24.20 1.0 17.80 1.0 5.0 12.5 31.9 tpsma22a bkp 20.90 23.10 1.0 18.80 1.0 5.0 13.1 30.6 tpsma24 blp 21.60 26.40 1.0 19.40 1.0 5.0 11.5 34.7 tpsma24a bmp 22.80 25.20 1.0 20.50 1.0 5.0 12.0 33.2 tpsma27 bnp 24.30 29.70 1.0 21.80 1.0 5.0 10.2 39.1 tpsma27a bpp 25.70 28.40 1.0 23.10 1.0 5.0 10.7 37.5 tpsma30 bqp 27.00 33.00 1.0 24.30 1.0 5.0 9.2 43.5 tpsma30a brp 28.50 31.50 1.0 25.60 1.0 5.0 9.7 41.4 tpsma33 bsp 29.70 36.30 1.0 26.80 1.0 5.0 8.4 47. tpsma33a btp 31.40 34.70 1.0 28.20 1.0 5.0 8.8 45.7 tpsma36 bup 32.40 39.60 1.0 29.10 1.0 5.0 7.7 52.0 tpsma36a bvp 34.20 37.80 1.0 30.80 1.0 5.0 8.0 49.9 tpsma39 bwp 35.10 42.90 1.0 31.60 1.0 5.0 7.1 56.4 tpsma39a bxp 37.10 41.00 1.0 33.30 1.0 5.0 7.4 53.9 tpsma43 byp 38.70 47.30 1.0 34.80 1.0 5.0 6.5 61.9 tpsma43a bzp 40.90 45.20 1.0 36.80 1.0 5.0 6.7 59.3 notes: (1) v (br) measured after i t applied for 300 s, i t =square wave pulse or equivalent (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35
tpsma6.8 thru tpsma43a vishay semiconductors formerly general semiconductor document number 88405 www.vishay.com 06-may-02 3 ratings and characteristic curves (t a = 25 c unless otherwise noted) fig.1 peak pulse power rating curve 0.1 1.0 10 100 0.1 s 1.0 s10 s 100 s 1.0ms 10ms p ppm, peak power (kw) c j , junction capacitance, pf v (br) , breakdown voltage (v) 10 100 1,000 10,000 1 10 100 200 td, pulse width, sec. fig. 4 typical junction capacitance fig. 2 pulse derating curve 0 25 50 75 100 0 50 100 150 200 peak pulse power (p pp ) or current (i pp ) derating in percentage (%) t a , ambient temperature ( c) t j = 25 c f = 1 mhz vsig = 50mvp-p v r measured at zero bias v r measured at stand-off voltage, v wm t a = 25 c non-repetitive pulse waveform shown in fig. 3 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas 200 100 number of cycles at 60 hz i fsm, peak forward surge current (a) 10 50 11050 5 100 t j = t j max 8.3ms single half sine-wave (jedec method) fig. 5 maximum non-repetitive peak forward surge current 0 50 100 150 i ppm peak pulse current, % i rsm fig. 3 pulse waveform t j = 25 c pulse width (td) is defined as the point where the peak current decays to 50% of i ppm tr = 10 sec. peak value i ppm half value ipp i ppm 2 td 10/1000 sec. waveform as defined by r.e.a. 0 1.0 2.0 3.0 4.0 t time (ms)
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